SI1000-C-GM RF Power Transistor High Power And Efficiency Wide Bandwidth

SI1000-C-GM RF Power Transistor

Features:

• High gain
• Low noise figure
• High power output
• Broadband performance
• Low heat dissipation
• No external bias circuitry required

Specifications:
• Frequency Range: 1.8-2.7 GHz
• Power Gain: 12dB min
• Power Output: 25W
• Noise Figure: 4dB typ
• Operating Voltage: 25V
• Operating Current: 1A max
• Package: Surface mount, TO-247

Why buy from us >>> Fast / Safely / Conveniently

• SKL is a Stock keeper and trade company of Electronic components .Our branches office include China, Hong Kong, Sigapore , Canada . Offer business, service, resourcing and information for our global member.
• Goods are ensured the highest quality possible and are delivered to our customers all over the world with speed and precision.

How to buy >>>

• Contact us by email & sent your inquire with your Transport destination .
• Online chat, the commissioner would be responded ASAP.

Service >>>

• Forwarder Shipment to world-wide, DHL ,TNT ,UPS,FEDEX etc. buyer don`t need to worry about shipping problem
• We will try to respond as quickly as possible. But due to time zone difference, please allow up to 24 hours to get your mail replied. The products were tested by some devices or software, we ensure that there is no quality problems.
• We are committed to providing fast, convenient and safe transportation service to global buyer.

SI1000-C-GM RF Power Transistor High Power And Efficiency Wide Bandwidth Images