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Brand Name : onsemi
Model Number : 2N7002W
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1 - 3 days
Packaging Details : standard
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Mounting Type : Surface Mount
Vgs (Max) : ±20V
Operating Temperature : -55°C ~ 150°C (TJ)
2N7002W MOSFET Power Electronics SC-70 High Performance Low Power Consumption
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 1.6Ohm @ 50mA, 5V | |
Vgs(th) (Max) @ Id | 2V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 0.7 nC @ 4.5 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 24.5 pF @ 20 V | |
FET Feature | - | |
Power Dissipation (Max) | 280mW (Tj) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | SC-70-3 (SOT323) | |
Package / Case |
The 2N7002W is a SC-70 packaged N-channel enhancement mode MOSFET from Diodes Inc. It is designed for low-voltage, low-current switching applications and offer low on-resistance, fast switching speed, and low threshold voltage. It is suitable for use in portable and handheld devices as well as for power management, high-speed switching, and low-side switching applications. The 2N7002W features a low RDS(on) of 0.35Ω, a low gate-source threshold voltage of 1V, and a fast switching speed of 75ns. The package is RoHS compliant, and it is AEC-Q101 qualified. The device can operate up to a drain-source voltage of 20V and a continuous drain current of 200mA. The 2N7002W is available in a SC-70 package and is ideal for space-constrained applications.
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2N7002W MOSFET Power Electronics SC-70 High Performance Low Power Consumption Images |